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| FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET March 2008 FDMA2002NZ General Description t tm tm Dual N-Channel PowerTrench(R) MOSFET Features * 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V RDS(ON) = 140 m @ VGS = 3.0 V RDS(ON) = 163 m @ VGS = 2.5 V * Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm * HBM ESD protection level = 1.8kV (Note 3) * RoHS Compliant This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 D2 D2 S1 G1 1 2 3 6 5 4 D1 G2 S2 MicroFET 2x2 D1 G2 S2 D2 Absolute Maximum Ratings Symbol VDS ID VGS Drain-Source Voltage Gate-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 30 12 2.9 2.7 10 (Note 1a) (Note 1b) Units V V A Drain Current - Continuous (TC = 25C, VGS = 4.5V) - Continuous (TC = 25C, VGS = 2.5V) - Pulsed PD TJ, TSTG Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Temperature 1.5 0.65 -55 to +150 W C RJA RJA RJA RJA Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) (Note 1c) (Note 1d) 83 (Single Operation) 193 (Single Operation) 68 (Dual Operation) 145 (Dual Operation) C/W Package Marking and Ordering Information Device Marking 002 (c)2008 Fairchild Semiconductor Corporation Device Reel Size 7'' Tape width 8mm Quantity 3000 units FDMA2002NZ Rev B2 (W) FDMA2002NZ FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Test Conditions ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 12 V, VGS = 0 V VDS = 0 V Min Typ Max Units 30 25 1 10 0.4 1.0 -3 75 84 92 95 138 150 190 30 20 123 140 163 166 203 268 220 40 30 12 16 21 10 3.0 1.5 V mV/C A A V mV/C Off Characteristics BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ On Characteristics ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5V, ID = 2.9A VGS = 3.0V, ID = 2.7A VGS = 2.5V, ID = 2.5A VGS = 4.5V, ID = 2.9A, TC = 85C VGS = 3.0V, ID = 2.7A, TC = 150C VGS = 2.5V, ID = 2.5A, TC = 150C VDS = 15 V, f = 1.0 MHz V GS = 0 V, RDS(on) Static Drain-Source On-Resistance m Dynamic Characteristics Ciss Input Capacitance Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS Output Capacitance Reverse Transfer Capacitance (Note 2) pF pF pF ns ns ns ns nC nC nC Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 6 8 12 2 VDS = 15 V, VGS = 4.5 V ID = 2.9 A, 2.4 0.35 0.75 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS = 2.0 A IS = 1.1 A IF = 2.9 A, dIF/dt = 100 A/s VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge 0.9 0.8 10 2 2.9 1.2 1.2 A V ns nC FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Notes: 2 1. RJA is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 83C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB (b) RJA = 193C/W when mounted on a minimum pad of 2 oz copper (d) RJA = 145C/W when mounted on a minimum pad of 2 oz copper (c) RJA = 68C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB a) 83oC/W when mounted on a 1in2 pad of 2 oz copper b) 193oC/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3.The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET Typical Characteristics 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5V 2.7V 3.5V 2.9V 2.0V 1.8 VGS = 2.0V ID, DRAIN CURRENT (A) 8 1.6 6 1.4 2.5V 4 1.2 2.7V 2.9V 3.5V 4.0V 4.5V 2 1.5V 1 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3 0.8 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.24 ID = 1.45A 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 RDS(ON), ON-RESISTANCE (OHM) ID = 2.9A VGS = 4.5V 0.2 0.16 TA = 125 C o 0.12 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0.08 TA = 25 C o 0.04 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 -IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V ID, DRAIN CURRENT (A) 8 25oC 125 C o 10 1 0.1 0.01 0.001 TA = 125 C 25oC -55oC o 6 4 2 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout rev3 FDMA2002NZ Rev B2 (W) FDMA2002NZ Dual N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * tm FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) tm PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R) The Power Franchise(R) tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDMA2002NZ Rev B2 (W) Preliminary First Production No Identification Needed Obsolete Full Production Not In Production |
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